NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The UPA838TF contains one NE688 and one NE687 NPN high frequency silicon bipolar chip. NECs new low profile TF package is ideal for all portable wireless applications where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily con

文件：18 Kbytes 页数：2 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The UPA838TF contains one NE688 and one NE687 NPN high frequency silicon bipolar chip. NECs new low profile TF package is ideal for all portable wireless applications where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily con

文件：18 Kbytes 页数：2 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TWIN TRANSISTOR

Renesas

瑞萨

VIM-838

文件：34.18 Kbytes 页数：1 Pages

VARITRONIX

京东方精电

3.2Gb/s 36x37 Crosspoint Switch

General Description The VSC838 is a monolithic 36x36 asynchronous crosspoint switch, designed to carry broadband data streams. The VSC838 also has an internal 37th output channel which is used in conjunction with the Activity Monitor to allow in system diagnostics. Features • 36 Input by 3

文件：296.78 Kbytes 页数：20 Pages

VITESSE

3.2Gb/s 36x37 Crosspoint Switch

General Description The VSC838 is a monolithic 36x36 asynchronous crosspoint switch, designed to carry broadband data streams. The VSC838 also has an internal 37th output channel which is used in conjunction with the Activity Monitor to allow in system diagnostics. Features • 36 Input by 3

文件：296.78 Kbytes 页数：20 Pages

VITESSE