UPA855TD

NPN SILICON RF TWIN TRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD

UPA855TD-T3

NPN SILICON RF TWIN TRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD

VJDEDUSTU855

VijeoDesigner-configurationsoftware-EducationalKit-V6.0

XOPA855IDSGT

8GHzGainBandwidthProduct,Gainof7V/VStable,BipolarInputAmplifier

XOPA855IDSGT

8-GHzGainBandwidthProduct,Gainof7-V/VStable,BipolarInputAmplifier

XPGA855RGTR

PGA855Low-Noise,Wide-Bandwidth,FullyDifferentialOutputProgrammable-GainInstrumentationAmplifier

1Features •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:1ppm/°C(max)atG=1V/V •Fullydifferentialoutputs –Independentoutputpower-supplypinstoallow forADCinputoverdriveprotection –Outputcommon-modecontrol •Faster

XPGA855RGTR

PGA855Low-Noise,Wide-Bandwidth,FullyDifferentialOutputProgrammable-GainInstrumentationAmplifier

1Features •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:2ppm/°C(max) •Fullydifferentialoutputs –Independentoutputpower-supplypins –Outputcommon-modecontrol •Fastersignalprocessing: –Widebandwidth:10MHzatallgains

ZTX855

NPNSILICONPLANARMEDIUMPOWERHIGHCURRENTTRANSISTOR

aFeatures •BVCEO>150V •IC=4AHighContinuousCollectorCurrent •ICM=10APeakPulseCurrent •TJupto200°CforHighTemperatureOperation •LowSaturationVoltage

ZTX855

NPNSILICONPLANARMEDIUMPOWERHIGHCURRENTTRANSISTOR

FEATURES *150VoltVCEO *4Ampscontinuouscurrent *Upto10Ampspeakcurrent *Verylowsaturationvoltage *Ptot=1.2Watt