NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., ½S21e½2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase di

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RENESAS

瑞萨

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., ½S21e½2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase di

文件：413.76 Kbytes 页数：35 Pages

RENESAS

瑞萨

QUAD CHANNEL HIGH SIDE DRIVER

Description The VNQ860-E, VNQ860SP-E are monolithic devices made using STMicroelectronics VIPower M0-3 technology, intended for driving any kind load with one side connected to ground. Active current limitation combined with thermal shut-down and automatic restart protect the device against overl

文件：288.97 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Family Hardware Specifications

Overview The MPC860 Quad Integrated Communications Controller (PowerQUICC™) is a versatile one-chip integrated microprocessor and peripheral combination designed for a variety of controller applications. It particularly excels in both communications and networking systems. The PowerQUICC unit i

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MOTOROLA

摩托罗拉

FREQUENCY MIXERS

NOTES: _ x Average of conversion loss at center of mid-band frequency (fL+fU /4) σ Standard deviation o Non-hermetic t When ordering, specify BNC or SMA connectors. * L=50-100 MHz; M=100-500 MHz ** Below 10 MHz IF, conversion loss increase up to 6 dB higher as frequency decreases to DC. **

文件：74.04 Kbytes 页数：2 Pages

MINI