首页 >UPA812>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

UPA812

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M

文件:50.06 Kbytes 页数:6 Pages

NEC

瑞萨

UPA812

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

Renesas

瑞萨

UPA812T

SILICON TRANSISTOR

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ´ 2SC4227) SMALL MINI MOLD FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini Mold Package Adopted

文件:249.87 Kbytes 页数:8 Pages

RENESAS

瑞萨

UPA812T

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M

文件:50.06 Kbytes 页数:6 Pages

NEC

瑞萨

UPA812T-T1

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M

文件:50.06 Kbytes 页数:6 Pages

NEC

瑞萨

UPA812T

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件:195.94 Kbytes 页数:4 Pages

CEL

UPA812T

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件:485.62 Kbytes 页数:3 Pages

CEL

UPA812T_09

NPN SILICON HIGH

文件:485.62 Kbytes 页数:3 Pages

CEL

UPA812T_V1

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件:485.62 Kbytes 页数:3 Pages

CEL

UPA812T-T1-A

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件:485.62 Kbytes 页数:3 Pages

CEL

详细参数

  • 型号:

    UPA812

  • 制造商:

    NEC

  • 制造商全称:

    NEC

  • 功能描述:

    HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

供应商型号品牌批号封装库存备注价格
NEC
24+
5000
询价
NEC
05+
原厂原装
36051
只做全新原装真实现货供应
询价
CEL
24+
原厂原封
1000
原装正品
询价
NEC
25+
R6SMM3000PCS
2987
绝对全新原装现货供应!
询价
NEC
23+
SOT-363
50000
全新原装正品现货,支持订货
询价
NEC
23+
SOT-363
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
California Eastern Labs
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
NEC
24+
NA/
12910
原厂直销,现货供应,账期支持!
询价
NEC
2023+
SOT-363
8800
正品渠道现货 终端可提供BOM表配单。
询价
NEC
23+
SOT-363
9760
全新原装正品现货,支持订货
询价
更多UPA812供应商 更新时间2025-10-9 14:02:00