SILICON TRANSISTOR

HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 u 2SC4226) THIN-TYPE SMALL MINI MOLD FEATURES • Low-noise NF= 1.2 dBTYP.@ f = 1 GHz, VCE = 3V, IC = 7mA • High gain IS21el2 = 9.0 dBTYP. @ f = 1 GHz, VCE = 3V, IC = 7mA • 6-pin thin-type small

文件：225.22 Kbytes 页数：18 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The UPA821TF has two built-in low-voltage transistors which are designed for low-noise amplification in the VHF to UHF band. The two die are chosen from adjacent locations on the wafer. These features combined with the pin configuration make this device ideal for balanced or mirrored

文件：40.07 Kbytes 页数：6 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The UPA821TF has two built-in low-voltage transistors which are designed for low-noise amplification in the VHF to UHF band. The two die are chosen from adjacent locations on the wafer. These features combined with the pin configuration make this device ideal for balanced or mirrored

文件：40.07 Kbytes 页数：6 Pages

NEC

瑞萨

SURGE PROTECTOR

文件：213.25 Kbytes 页数：1 Pages

OKAYA

Wideband, > 40dB Gain Adjust Range, Linear in V/V VARIABLE GAIN AMPLIFIER

文件：899.33 Kbytes 页数：35 Pages

TI

德州仪器

Ultra-Wideband, > 40dB Gain Adjust Range, Linear in dB VARIABLE GAIN AMPLIFIER

文件：1.68608 Mbytes 页数：38 Pages

TI

德州仪器