UPA821TF-T1中文资料瑞萨数据手册PDF规格书

DESCRIPTION

The UPA821TF has two built-in low-voltage transistors which are designed for low-noise amplification in the VHF to UHF band. The two die are chosen from adjacent locations on the wafer. These features combined with the pin configuration make this device ideal for balanced or mirrored applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The thinner package style allows for higher density designs.

FEATURES

• LOW NOISE:

NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA

• HIGH GAIN:

|S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA

• SMALL PACKAGE STYLE:

2 NE856 die in a 2 mm x 1.25 mm x 0.6 mm package