NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The UPA837TF contains one NE686 and one NE688 NPN high frequency silicon bipolar chip. NECs new low profile TF package is ideal for all portable wireless applications where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily con

文件：18.02 Kbytes 页数：2 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The UPA837TF contains one NE686 and one NE688 NPN high frequency silicon bipolar chip. NECs new low profile TF package is ideal for all portable wireless applications where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily con

文件：18.02 Kbytes 页数：2 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TWIN TRANSISTOR

Renesas

瑞萨

3.2Gb/s 68x68 Crosspoint Switch

General Description The VSC837 is a monolithic 68x68 asynchronous crosspoint switch, designed to carry broadband data streams. The non-blocking switch core is programmed through a triple-mode port interface that allows random access programming of each input/output port. A high degree of signal i

文件：340.77 Kbytes 页数：26 Pages

VITESSE

3.2Gb/s 68x68 Crosspoint Switch

General Description The VSC837 is a monolithic 68x68 asynchronous crosspoint switch, designed to carry broadband data streams. The non-blocking switch core is programmed through a triple-mode port interface that allows random access programming of each input/output port. A high degree of signal i

文件：340.77 Kbytes 页数：26 Pages

VITESSE