NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The UPA839TF contains one NE680 and one NE856 NPN high frequency silicon bipolar chip. NECs new low profile TF package is ideal for all portable wireless applications where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily con

文件：17.49 Kbytes 页数：2 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The UPA839TF contains one NE680 and one NE856 NPN high frequency silicon bipolar chip. NECs new low profile TF package is ideal for all portable wireless applications where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily con

文件：17.49 Kbytes 页数：2 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TWIN TRANSISTOR

Renesas

瑞萨

Surface Mount Zener Diodes

Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package

文件：66.99 Kbytes 页数：2 Pages

KEXIN

科信电子

0.35 ohm CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUX

GENERAL DESCRIPTION The ADG839 isa low voltage CMOS device containing a single pole, double-throw(SPDT) switch. This device offers ultralow onresistanceoflessthan0.6 Ω over the fulltemperature range. The ADG839 isfully specified for 1.8 V,2.5 V,and 3.3 V supply operation. FEATURES 1.65

文件：436.59 Kbytes 页数：16 Pages

AD

亚德诺

0.35 ohm CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUX

GENERAL DESCRIPTION The ADG839 isa low voltage CMOS device containing a single pole, double-throw(SPDT) switch. This device offers ultralow onresistanceoflessthan0.6 Ω over the fulltemperature range. The ADG839 isfully specified for 1.8 V,2.5 V,and 3.3 V supply operation. FEATURES 1.65

文件：436.59 Kbytes 页数：16 Pages

AD

亚德诺