NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

文件：71.64 Kbytes 页数：12 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

文件：71.64 Kbytes 页数：12 Pages

NEC

瑞萨

SCHOTTKY BARRIER RECTIFIER 8 AMP 35 VOLT

SURFACE MOUNT POWERMITE® 3 Surface Mount Power Package Features • Low Profile – Maximum height of 1.1 mm • Footprint Area of 16.51 mm • Low VF Provides Higher Efficiency • Supplied in 16mm Tape and Reel – 6000 units/reel • Low Thermal Resistance with Direct Thermal Path of Die on Exposed Ca

文件：54.62 Kbytes 页数：2 Pages

MICROSEMI

美高森美

POWER SCHOTTKY RECTIFIERS

文件：90.54 Kbytes 页数：2 Pages

MICROSEMI

美高森美

SOT23 SILICON VARIABLE CAPACITANCE DIODES

SOT23 SILICON VARIABLE CAPACITANCE FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance(IR Typically

文件：19.16 Kbytes 页数：2 Pages

ZETEX