NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5745) Q1: High gain transistor fT = 12.0 GHz TYP., ½S21e½2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase di

文件：351.49 Kbytes 页数：35 Pages

RENESAS

瑞萨

PGA854 Low-Noise, Wide-Bandwidth, Decade Gain, Precision Programmable Gain Instrumentation Amplifier

1 Features • Eight pin-programmable decade (scope) gains – G (V/V) = ½, 1, 2, 5, 10, 20, 50, and 100 • Fully differential outputs • Output common-mode control • Low gain error drift: ±2ppm/°C (maximum) • Faster signal processing: – Wide bandwidth: 6.2MHz (G

文件：3.71129 Mbytes 页数：39 Pages

TI

德州仪器

PGA854 Low-Noise, Wide-Bandwidth, Decade Gain, Precision Programmable Gain Instrumentation Amplifier

1 Features • Eight pin-programmable decade (scope) gains – G (V/V) = ½, 1, 2, 5, 10, 20, 50, and 100 • Fully differential outputs • Output common-mode control • Low gain error drift: ±2ppm/°C (maximum) • Faster signal processing: – Wide bandwidth: 6.2MHz (G

文件：1.15231 Mbytes 页数：24 Pages

TI

德州仪器

Crimping machines and tools

文件：1.01138 Mbytes 页数：9 Pages

JST

JST集团