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型号	下载订购	功能描述	制造商上传企业	LOGO
UPA800T	文件：51.21 Kbytes Page：6 Pages	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, 文件：51.21 Kbytes 页数：6 Pages	NEC 瑞萨	NEC
UPA800T	文件：211.33 Kbytes Page：8 Pages	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, 文件：211.33 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
UPA800TF	文件：15.18 Kbytes Page：1 Pages	NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The UPA800TF contains two NE680 NPN high frequency silicon bipolar chips. NECs new low profile TF package is ideal for all portable wireless applicatons where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily configured for tw 文件：15.18 Kbytes 页数：1 Pages	NEC 瑞萨	NEC
UPA800T-T1	文件：51.21 Kbytes Page：6 Pages	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, 文件：51.21 Kbytes 页数：6 Pages	NEC 瑞萨	NEC
UPA800T-T1	文件：211.33 Kbytes Page：8 Pages	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, 文件：211.33 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
UPA801	文件：76.04 Kbytes Page：12 Pages	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: \|S21e\|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 文件：76.04 Kbytes 页数：12 Pages	NEC 瑞萨	NEC
UPA801T	文件：76.04 Kbytes Page：12 Pages	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: \|S21e\|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 文件：76.04 Kbytes 页数：12 Pages	NEC 瑞萨	NEC
UPA801T	文件：217.64 Kbytes Page：8 Pages	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR The µPA801T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain \|S21e\|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Mini Mold Package Adopted 文件：217.64 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
UPA801TC	文件：76.04 Kbytes Page：12 Pages	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: \|S21e\|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 文件：76.04 Kbytes 页数：12 Pages	NEC 瑞萨	NEC
UPA801TC-T1	文件：76.04 Kbytes Page：12 Pages	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: \|S21e\|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 文件：76.04 Kbytes 页数：12 Pages	NEC 瑞萨	NEC

产品属性

产品编号：
UPA800T-T1
制造商：
CEL
类别：
分立半导体产品 > 晶体管 - 双极（BJT）- 射频
包装：
托盘
晶体管类型：
2 NPN（双）
电压 - 集射极击穿（最大值）：
10V
频率 - 跃迁：
8GHz
噪声系数（dB，不同 f 时的典型值）：
1.9dB ~ 3.2dB @ 2GHz
功率 - 最大值：
200mW
不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
80 @ 5mA，3V
电流 - 集电极 (Ic)（最大值）：
35mA
工作温度：
150°C（TJ）
安装类型：
表面贴装型
封装/外壳：
6-TSSOP，SC-88，SOT-363
供应商器件封装：
6-SO
描述：
RF TRANS 2 NPN 10V 8GHZ 6SO

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市科达星科技有限公司	UPA800T-T1	NEC	24+	SOT-6	26200	原装现货,诚信经营!	询价
深圳市一线半导体有限公司	UPA800T-T1	NEC	24+	SOT-363/SOT-323-6	57200	新进库存/原装	询价
深圳市恒创达实业有限公司	UPA800T-T1	NEC	17+	SOT-363	6200	100%原装正品现货	询价
深圳市凌旭科技有限公司	UPA800T-T1	NEC	2016+	SOT363	9000	只做原装,假一罚十,公司可开17%增值税发票!	询价
齐创科技(上海,北京,青岛)有限公司	UPA800T-T1	REALTEK	23+	QFP48	5000	原装正品,假一罚十	询价
深圳市佳鑫美电子科技有限公司	UPA800T-T1	NEC	25+	SOT363	2987	绝对全新原装现货供应!	询价
深圳市华来深电子有限公司	UPA800T-T1	NEC	23+	SOT-363	8560	受权代理!全新原装现货特价热卖!	询价
深圳市振宏微科技有限公司	UPA800T-T1	NEC(VA)	23+	原厂封装	13528	振宏微原装正品,假一罚百	询价
深圳市华斯顿科技有限公司	UPA800T-T1	NEC	25+23+	Sot-363	29548	绝对原装正品全新进口深圳现货	询价
深圳诚思涵科技有限公司	UPA800T-T1	NEC	19+	SOT-363	20000	8600	询价

更多UPA80供应商更新时间2025-12-19 14:08:00

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