HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

文件：51.21 Kbytes 页数：6 Pages

NEC

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HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

文件：211.33 Kbytes 页数：8 Pages

RENESAS

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Package：6-TSSOP，SC-88，SOT-363；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS 2 NPN 10V 8GHZ 6SO

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NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：192.73 Kbytes 页数：9 Pages

CEL

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：446.61 Kbytes 页数：8 Pages

CEL

Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS 2 NPN 10V 8GHZ SOT363

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