HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

The µPA810T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High Gain |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • A Small Mini Mold Package A

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NPN SILICON HIGH FREQUENCY TRANSISTOR

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NPN SILICON HIGH FREQUENCY TRANSISTOR

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HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 ×2SC4226) SMALL MINI MOLD

The µPA810T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band.FEATURES\n• Low Noise\n  NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• High Gain\n  |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• A Small Mini Mold Package Adopt • Low Noise\n  NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• High Gain\n  |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA\n• A Small Mini Mold Package Adopted\n• Built-in 2 Transistors (2 ×2SC4226);

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Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS 2 NPN 12V 4.5GHZ 6SO

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NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：207.42 Kbytes 页数：3 Pages

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NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：486.37 Kbytes 页数：2 Pages

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Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS 2 NPN 12V 4.5GHZ SOT363

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