SILICON TRANSISTOR

The 2SC4571 has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT= 5.0 GHz TYP. (@ VCE= 5 V, IC= 5 mA, f = 1 GHz) • Small Collector Capacitance Cob= 0.9 pF TYP. (@ VCB= 5 V, IE= 0, f = 1 MHz) • A surface Mounting Package Adopted • Built-in 2 Transistors (2 ×2S

文件：52.65 Kbytes 页数：8 Pages

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SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD FEATURES • High fT fT = 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz) • A surface Mounting Package Adopted • Built-in 2 Transistors (2

文件：271.09 Kbytes 页数：10 Pages

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NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA804TC has built-in two transistors which were developed for UHF. FEATURES • High fT: fT= 5.0 GHz TYP. (@ VCE= 5 V, IC= 5 mA, f = 1 GHz) • Flat-lead 6-pin thin-type ultra super minimold package • Built-in 2 transistors (2 ×2SC5004)

文件：66.21 Kbytes 页数：16 Pages

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NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA804TC has built-in two transistors which were developed for UHF. FEATURES • High fT: fT= 5.0 GHz TYP. (@ VCE= 5 V, IC= 5 mA, f = 1 GHz) • Flat-lead 6-pin thin-type ultra super minimold package • Built-in 2 transistors (2 ×2SC5004)

文件：66.21 Kbytes 页数：16 Pages

NEC

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SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD FEATURES • High fT fT = 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz) • A surface Mounting Package Adopted • Built-in 2 Transistors (2

文件：271.09 Kbytes 页数：10 Pages

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瑞萨

SILICON TRANSISTOR

The 2SC4571 has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT= 5.0 GHz TYP. (@ VCE= 5 V, IC= 5 mA, f = 1 GHz) • Small Collector Capacitance Cob= 0.9 pF TYP. (@ VCB= 5 V, IE= 0, f = 1 MHz) • A surface Mounting Package Adopted • Built-in 2 Transistors (2 ×2S

文件：52.65 Kbytes 页数：8 Pages

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MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

文件：57.77 Kbytes 页数：6 Pages

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MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

文件：57.77 Kbytes 页数：6 Pages

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isc Silicon NPN RF Transistor

DESCRIPTION • With SOT-363 packaging • Low voltage use • Ultra super mini mold package • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise and small signal amplifiers from VHF band to UHF band

文件：197.85 Kbytes 页数：2 Pages

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无锡固电

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

文件：57.77 Kbytes 页数：6 Pages

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