P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA678TB is a switching device, which can be driven directly by a 2.5 V power source. The µ PA678TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V

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NEC

瑞萨

Old Company Name in Catalogs and Other Documents

DESCRIPTION The µ PA678TB is a switching device, which can be driven directly by a 2.5 V power source. The µ PA678TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V

文件：196.4 Kbytes 页数：8 Pages

RENESAS

瑞萨

Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nThe µ PA678TB is a switching device, which can be driven directly by a 2. 5 V power source. The µ PA678TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as p • 2.5 V drive available\n• Low on-state resistance RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.20 A) RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.20 A) RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)\n• Two MOS FET circuits in same size package as SC-70;

Renesas

瑞萨

FAST RECOVERY DIODE

FAST RECOVERY DIODE Repetitive voltage up to 4500 V Mean forward current 1690 A Surge current 27 kA

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POSEICO

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

文件：110.03 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

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STMICROELECTRONICS

意法半导体