| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BD678 | Plastic Medium-Power Silicon PNP Darlingtons PlasticMedium−PowerSiliconPNPDarlingtons ...foruseasoutputdevicesincomplementarygeneral–purposeamplifierapplications. •HighDCCurrentGain— hFE=750(Min)@IC=1.5and2.0Adc •MonolithicConstruction •BD676,676A,678,678A,680,680A,682arecomplementarywithBD | MotorolaMotorola, Inc 摩托罗拉 |  | |
BD678 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
BD678 | NPN SILICON DARLINGTON TRANSISTORS PNPSiliconDarlingtonTransistors Epibasepowerdarlingtontransistors(40W) | SIEMENS Siemens Ltd |  | |
BD678 | Plastic Medium?뭁ower Silicon PNP Darlingtons PlasticMedium−PowerSiliconPNPDarlingtons Thisseriesofplastic,medium−powersiliconPNPDarlingtontransistorscanbeusedasoutputdevicesincomplementarygeneral−purposeamplifierapplications. Features •HighDCCurrentGain−hFE=750(Min)@IC=1.5and2.0Adc •MonolithicCons | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
BD678 | PNP DARLIGNTON POWER SILICON TRANSISTORS PNPDARLIGNTONPOWERSILICONTRANSISTORS ForUseAsOutputDevicesInComplementaryGeneralPurposeAmplifierApplications. COMPLEMENTARYTOBD675,675A,677,677A,679,679A,681&683BD678,678A,680,680AAREEQUIVALENTTOMJE700,702,703. | TEL TRANSYS Electronics Limited |  | |
BD678 | Complementary power Darlington transistors Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
BD678 | Silicon PNP Darligton Power Transistors DESCRIPTION •WithTO-126package •ComplementtotypeBD675/BD677/BD679 •DARLINGTON •HighDCcurrentgain APPLICATIONS •Foruseasoutputdevicesincomplementarygeneral–purposeamplifierapplications | SAVANTIC Savantic, Inc. |  | |
BD678 | SILICON DARLINGTON POWER TRANSISTORS SILICONDARLINGTONPOWERTRANSISTORS TheBD676/A-BD678/A-BD680/A-BD682/AarePNPtransistorsmountedinJedecTO-126plasticpackage. Theyareeptaxial-basetransistorsinmonolithicDarlingtoncircuitforaudioandvideoapplications. NPNcomplementsareBD675/A-BD677/A-BD679/A-BD681/A Compli | COMSET Comset Semiconductor |  | |
BD678 | Silicon PNP Darligton Power Transistors DESCRIPTION •WithTO-126package •ComplementtotypeBD675/BD677/BD679 •DARLINGTON •HighDCcurrentgain APPLICATIONS •Foruseasoutputdevicesincomplementarygeneral–purposeamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
BD678 | PNP SILICON DARLINGTON TRANSISTORS PNPSiliconDarlingtonTransistors Epibasepowerdarlingtontransistors(40W) | SIEMENS Siemens Ltd | | |
BD678 | PNP DARLIGNTON POWER SILICON TRANSISTORS PNPDARLIGNTONPOWERSILICONTRANSISTORS ForUseAsOutputDevicesInComplementaryGeneralPurposeAmplifierApplications. COMPLEMENTARYTOBD675,675A,677,677A,679,679A,681&683 BD678,678A,680,680AAREEQUIVALENTTOMJE700,702,703. | CDIL CDIL |  | |
BD678 | SILICON DARLINGTON POWER TRANSISTORS SILICONDARLINGTONPOWERTRANSISTORS TheBD676/A-BD678/A-BD680/A-BD682/AarePNPtransistorsmountedinJedecTO-126plasticpackage. Theyareeptaxial-basetransistorsinmonolithicDarlingtoncircuitforaudioandvideoapplications. NPNcomplementsareBD675/A-BD677/A-BD679/A-BD681/A Compli | COMSET Comset Semiconductor | | |
BD678 | Complementary power Darlington transistors Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
BD678 | Complementary power Darlington transistors Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
BD678 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
BD678 | 包装：散装 封装/外壳：TO-225AA，TO-126-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 60V 4A TO126 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
BD678 | 包装：带盒（TB） 封装/外壳：TO-225AA，TO-126-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 60V 4A SOT32-3 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
Plastic Medium?뭁ower Silicon PNP Darlingtons PlasticMedium−PowerSiliconPNPDarlingtons Thisseriesofplastic,medium−powersiliconPNPDarlingtontransistorscanbeusedasoutputdevicesincomplementarygeneral−purposeamplifierapplications. Features •HighDCCurrentGain−hFE=750(Min)@IC=1.5and2.0Adc •MonolithicCons | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
PNP DARLIGNTON POWER SILICON TRANSISTORS PNPDARLIGNTONPOWERSILICONTRANSISTORS ForUseAsOutputDevicesInComplementaryGeneralPurposeAmplifierApplications. COMPLEMENTARYTOBD675,675A,677,677A,679,679A,681&683BD678,678A,680,680AAREEQUIVALENTTOMJE700,702,703. | TEL TRANSYS Electronics Limited | | ||
Complementary power Darlington transistors Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-P+Darl+Di
- 性质：
低频或音频放大 （LF）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
60V
- 最大电流允许值：
4A
- 最大工作频率：
>10MHZ
- 引脚数：
3
- 可代换的型号：
BD262,BD778,FC50B,2N6035,
- 最大耗散功率：
40W
- 放大倍数：
β>750
- 图片代号：
B-21
- vtest：
60
- htest：
10000100
- atest：
4
- wtest：
40
产品属性
- 产品编号：
BD678
- 制造商：
onsemi
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
散装
- 晶体管类型：
PNP - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
2.5V @ 30mA，1.5A
- 电流 - 集电极截止（最大值）：
500µA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
750 @ 1.5A，3V
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-225AA，TO-126-3
- 供应商器件封装：
TO-126
- 描述：
TRANS PNP DARL 60V 4A TO126
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
SOT-32 |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
STM |
21+ |
SOT-32-3 (TO-126-3) |
1700 |
询价 | |||
ST(意法半导体) |
23+ |
SOT-32 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
ST/ON |
16+ |
TO-126 |
8900 |
全新原装现货,假一罚十 |
询价 | ||
STM |
21+ |
SOT-32-3 (TO-126-3) |
2000 |
原装正品 有挂有货 |
询价 | ||
STM |
21+ |
2000 |
SOT-32-3 (TO-126-3) |
询价 | |||
STM |
23+ |
SOT-32-3 (TO-126-3) |
2000 |
原装现货支持送检 |
询价 | ||
ON/安森美 |
17+ |
TO-126 |
31518 |
原装正品 可含税交易 |
询价 | ||
ST/意法半导体 |
2023 |
SOT-32 |
6000 |
公司原装现货/支持实单 |
询价 | ||
MOTOROLA |
2000 |
175 |
原装正品现货供应 |
询价 |
