Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：382.94 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：382.93 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：382.93 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

PNP DARLIGNTON POWER SILICON TRANSISTORS

PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.

文件：55.2 Kbytes 页数：3 Pages

TEL

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件：252.33 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

丝印：BD67870；Package：UQFN28AV040A；4.5 V to 60 V, Three-phase Brushless DC Motor Gate Driver

Features ◼ Wide 4.5 V to 60 V Input Voltage Range ◼ Bootstrap Gate Driver with Current Source Circuit for 100 % Duty Cycle Operation and High-impedance (Hi- Z) State with Trickle Charge Pump ◼ Super Low IVCCQ (

文件：1.93878 Mbytes 页数：31 Pages

ROHM

罗姆

丝印：BD67872；Package：UQFN28AV040A；4.5 V to 60 V, Three-phase Brushless DC Motor Gate Driver

Features ◼ Wide 4.5 V to 60 V Input Voltage Range ◼ Bootstrap Gate Driver with Current Source Circuit for 100 % Duty Cycle Operation and High-impedance (Hi- Z) State with Trickle Charge Pump ◼ Super Low IVCCQ (

文件：1.93419 Mbytes 页数：31 Pages

ROHM

罗姆

4.0 A，60 V，PNP 达林顿双极功率晶体管

This series of plastic, medium-powerPNP Darlington transistors can be used as output devices in complementary general-purpose amplifier applications. • High DC Current Gain - hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc\n• Monolithic Construction\n• BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681\n• BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703\n• Pb-Free Packages are Available;

ONSEMI

安森美半导体

Trans Darlington PNP 60V 4A 3-Pin TO-126

NJS

Transistor

Comset