HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

The µPA802T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Mini Mold Package Adopted

文件：53.04 Kbytes 页数：6 Pages

NEC

瑞萨

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

The µPA802T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Mini Mold Package Adopted

文件：216.28 Kbytes 页数：8 Pages

RENESAS

瑞萨

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：236.48 Kbytes 页数：10 Pages

CEL

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：606.19 Kbytes 页数：9 Pages

CEL

Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS 2 NPN 10V 7GHZ SOT363

CEL