SILICON TRANSISTOR

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors

文件：282.72 Kbytes 页数：14 Pages

RENESAS

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

文件：65.4 Kbytes 页数：12 Pages

NEC

瑞萨

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：224.21 Kbytes 页数：10 Pages

CEL

SOT363

NEC

瑞萨

上传：深圳市吉利鑫科技发展有限公司

SOD363

RENESAS

瑞萨

上传：深圳市正纳电子有限公司