MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • A Mini Mold Package Adopted • Built-in 2 Transistors (

文件：66.21 Kbytes 页数：10 Pages

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NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：38.16 Kbytes 页数：5 Pages

NEC

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NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The UPA809TF contains two NE688 NPN high frequency silicon bipolar chips. NECs new low profile TF package is ideal for all portable wireless applicatons where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily configured for tw

文件：15.29 Kbytes 页数：1 Pages

NEC

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MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • A Mini Mold Package Adopted • Built-in 2 Transistors (

文件：66.21 Kbytes 页数：10 Pages

NEC

瑞萨

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：38.16 Kbytes 页数：5 Pages

NEC

瑞萨

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：38.16 Kbytes 页数：5 Pages

NEC

瑞萨