| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRFI640G | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat 文件:1.80136 Mbytes 页数:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFI640G | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A) DESCRIPTION Third generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-in 文件:172.81 Kbytes 页数:6 Pages | IRF | IRF | |
IRFI640G | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 9.8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC convert 文件:322.94 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
IRFI640G | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat 文件:4.31856 Mbytes 页数:7 Pages | KERSEMI | KERSEMI | |
IRFI640G | Power MOSFET 文件:1.81084 Mbytes 页数:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFI640G | Power MOSFET 文件:966.65 Kbytes 页数:10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat 文件:1.80136 Mbytes 页数:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat 文件:4.31856 Mbytes 页数:7 Pages | KERSEMI | KERSEMI | ||
power mosfet DESCRIPTION Third generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-in 文件:1.33877 Mbytes 页数:8 Pages | IRF | IRF | ||
Power MOSFET 文件:1.81084 Mbytes 页数:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
详细参数
- 型号:
IRFI640G
- 功能描述:
MOSFET N-Chan 200V 9.8 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
25+ |
PLCC44 |
18000 |
原厂直接发货进口原装 |
询价 | ||
IR |
06+ |
TO-220 |
5000 |
全新原装 绝对有货 |
询价 | ||
IR |
25+ |
TO-220 |
400 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
IR |
23+ |
TO-220F |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
24+ |
TO-220FullPak(Iso) |
8866 |
询价 | |||
Vishay |
23+ |
TO-220F |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
ST/意法 |
23+ |
TO220CUW |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
24+ |
TO-220F |
6430 |
原装现货/欢迎来电咨询 |
询价 |
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