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IRFI640G

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件:1.80136 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFI640G

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A)

DESCRIPTION Third generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-in

文件:172.81 Kbytes 页数:6 Pages

IRF

IRFI640G

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 9.8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC convert

文件:322.94 Kbytes 页数:2 Pages

ISC

无锡固电

IRFI640G

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件:4.31856 Mbytes 页数:7 Pages

KERSEMI

IRFI640G

Power MOSFET

文件:1.81084 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFI640G

Power MOSFET

文件:966.65 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRFI640GPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件:1.80136 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFI640GPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件:4.31856 Mbytes 页数:7 Pages

KERSEMI

IRFI640GPBF

power mosfet

DESCRIPTION Third generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-in

文件:1.33877 Mbytes 页数:8 Pages

IRF

IRFI640G_17

Power MOSFET

文件:1.81084 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    IRFI640G

  • 功能描述:

    MOSFET N-Chan 200V 9.8 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
24+
N/A
8000
全新原装正品,现货销售
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
25+
PLCC44
18000
原厂直接发货进口原装
询价
IR
06+
TO-220
5000
全新原装 绝对有货
询价
IR
25+
TO-220
400
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
23+
TO-220F
5000
原装正品,假一罚十
询价
IR
24+
TO-220FullPak(Iso)
8866
询价
Vishay
23+
TO-220F
8560
受权代理!全新原装现货特价热卖!
询价
ST/意法
23+
TO220CUW
69820
终端可以免费供样,支持BOM配单!
询价
24+
TO-220F
6430
原装现货/欢迎来电咨询
询价
更多IRFI640G供应商 更新时间2025-12-4 10:09:00