Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件：1.4616 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Isolated Package • High Voltage Isolation = 2.5 KVRMS • Sink to Lead Creepage Dis. = 4.8 mm

文件：920.99 Kbytes 页数：8 Pages

IRF

IR
SOT-223

IR

国际整流器

上传：深圳市创芯联盈电子有限公司

IR
SOT-223

IR

国际整流器

上传：深圳市勤思达科技有限公司

IR
SOT-223

IR

国际整流器

上传：深圳市芯巴巴科技有限公司