首页 >IRFL014NTRPBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRFL014NTRPBF | N-Channel Enhancement Mode Power MOSFET GENERALFEATURES 60V,4A,Rps(on)=85mQ@Vgs=10V. Rpsion)=100mQ@Vgs=4.5V. HighdensecelldesignforextremelylowRps(on)- Ruggedandreliable. Leadfreeproductisacquired. SOT-223package. | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 |  | |
IRFL014NTRPBF | Advanced Process Technology Description FifthGenerationHEXFET®MOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET®powerMOSFETsarewellknownfor | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
Fieldreplaceablebearingsandelectronics | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | ||
AluminumorLexancupsavailable | etc2List of Unclassifed Manufacturers etc2未分类制造商 | | ||
EFD20HIGHFREQUENCYPoETRANSFORMER | ALLIED Allied Components International |  | ||
Implement3.3VdualusingAIC1730 | AIC AIC |  | ||
PolySwitchResettableDevices | MACOM Tyco Electronics |  | ||
LowOn-Resistance | etc2List of Unclassifed Manufacturers etc2未分类制造商 | | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | ||
AdvancedPlanarTechnologyLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
AdvancedPlanarTechnologyLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
HEXFET짰PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
HEXFET짰PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |
详细参数
- 型号：
IRFL014NTRPBF
- 功能描述：
MOSFET MOSFT 55V 1.9A 160mOhm 7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
SOT-223 |
20540 |
保证进口原装现货假一赔十 |
询价 | ||
IR |
2020+ |
SOT-223 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
INFINEON/IR |
18+ |
SOT-223 |
2500 |
询价 | |||
INFINEON/IR |
1907+ |
NA |
5000 |
20年老字号,原装优势长期供货 |
询价 | ||
Infineon Technologies |
23+ |
SOT-223 |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
IR |
0807+ |
SOT223 |
639 |
公司原装现货,可来看货! |
询价 | ||
IR |
23+ |
SOT-223 |
65400 |
询价 | |||
IR |
2020+ |
SOT-223 |
990000 |
原装正品,诚信经营。 |
询价 | ||
INFINEON/英飞凌 |
2019+ |
SOT223 |
78550 |
原厂渠道 可含税出货 |
询价 | ||
INFINEON/英飞凌 |
20+ |
SOT-223 |
22500 |
进口原装支持含税 |
询价 |
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