Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Sw

文件：1.56832 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

文件：848.45 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

Standard Power MOSFET - N-Channel Enhancement Mode

N-Channel Enhancement Mode Standard Power MOSFET Features • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • High commutating dv/dt rating • Fast switching times Applications • Switch-mode and resonant-mode po

文件：47.02 Kbytes 页数：2 Pages

IXYS

艾赛斯

Power MOSFET(Vdss=250V, Rds(on)=0.075ohm, Id=38A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ● Dynamic dv/dt Rating ● Repetitive Avalanche Rated ● Isolated Central Mounting Hole ● Fast S

文件：168.34 Kbytes 页数：6 Pages

IRF

iscN-Channel MOSFET Transistor

文件：443.82 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：1.57849 Mbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特

Power MOSFET

• Dynamic dV/dt Rating\n• Repetitive Avalanche Rated\n• Isolated Central Mounting Hole;

Vishay

威世

HEXFET Power MOSFET

Description\nThird Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.● Dynamic dv/dt Rating\n● Repetitive Avalanche Rated\n● Isolated Central Mounting Hole\n● Fast Switc

Infineon

英飞凌

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

文件：848.45 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司