首页 >IRFL024NPBF>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRFL024NPBF | HEXFET짰 Power MOSFET VDSS = 55V RDS(on) = 57.5mΩ ID = 5.1A Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and impro 文件：135.03 Kbytes 页数：8 Pages | IRF | IRF | |
IRFL024NPBF | Advanced Process Technology 文件：140.38 Kbytes 页数：8 Pages | IRF | IRF | |
Advanced Process Technology 文件：140.38 Kbytes 页数：8 Pages | IRF | IRF | ||
Surface Mount 文件：115.72 Kbytes 页数：8 Pages | IRF | IRF | ||
Advanced Process Technology 文件：115.72 Kbytes 页数：8 Pages | IRF | IRF | ||
HEXFET Power MOSFET VDSS = 55V RDS(on) = 57.5mΩ ID = 5.1A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction op 文件：269.18 Kbytes 页数：10 Pages | IRF | IRF |
详细参数
- 型号：
IRFL024NPBF
- 功能描述：
MOSFET 55V 1 N-CH HEXFET 7.5mOhms 63nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
SOT-223 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IR |
25+ |
SOT223 |
80 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
IR |
23+ |
SOT-223 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
International Rectifier |
2022+ |
380 |
全新原装 货期两周 |
询价 | |||
IR |
24+ |
65230 |
询价 | ||||
IR |
23+ |
SOT-223 |
3022 |
原装正品代理渠道价格优势 |
询价 | ||
IR |
14+PBF |
SOT-223 |
18000 |
现货 |
询价 | ||
INFINEON |
25+ |
SOT-223 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
询价 |
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