Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq

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VISHAYVishay Siliconix

威世威世科技公司

HEXFET짰 Power MOSFET

文件：225.07 Kbytes 页数：9 Pages

IRF

Silicon NPN Transistor Darlington Driver

Description: The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers. Features: • High DC Current Gain • Large Current Capacity and Wide ASO •

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NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

文件：55.13 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

EXCALIBUR LOW-NOISE HIGH-SPEED PRECISION OPERATIONAL AMPLIFIERS

文件：1.3308 Mbytes 页数：70 Pages

TI

德州仪器