Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

文件：1.55765 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about p

文件：896.81 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ● Dynamic dv/dt Rating ● Isolated Central Mounting Hole ● 175°C Operating Temperature ● Ease

文件：174.09 Kbytes 页数：6 Pages

IRF

iscN-Channel MOSFET Transistor

文件：444.81 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：1.58435 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.61131 Mbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.57958 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.57958 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

• Dynamic dV/dt rating\n• Isolated central mounting hole\n• 175 °C operating temperature;

Vishay

威世

Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)

Infineon

英飞凌