Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclud

文件：1.82938 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Preferred for commercail-industrial applications where higher power levels preclude the use of TO-220 devices.

Description Third Generation HEXFETs from Internatioal Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

文件：1.22262 Mbytes 页数：8 Pages

IRF

Power MOSFET

文件：1.78938 Mbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Preferred for commercail-industrial applications where higher power levels preclude the use of TO-220 devices.

Infineon

英飞凌