Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

文件：541.53 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

文件：687.16 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

Standard Power MOSFET - N-Channel Enhancement Mode

Features • International standard package JEDEC TO-247 AD • Low RDS (on)HDMOS™ process • Rugged polysilicon gate cell structure • High commutating dv/dt rating • Fast switching times

文件：36.08 Kbytes 页数：2 Pages

IXYS

艾赛斯

Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：122.69 Kbytes 页数：8 Pages

IRF

HEXFET® Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- ctiveness. The TO-247 package preferred for commercial-industrial applications where higher power levels pr

文件：172.72 Kbytes 页数：6 Pages

IRF

iscN-Channel MOSFET Transistor

文件：443.71 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：1.79918 Mbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Isolated central mounting hole;

Vishay

威世

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

文件：687.16 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司