HEXFET® Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- ctiveness. The TO-247 package preferred for commercial-industrial applications where higher power levels pr

文件：172.72 Kbytes 页数：6 Pages

IRF

N-Channel MOSFET Transistor

· DESCRITION · High Speed Power Switching · FEATURES · Static drain-source on-resistance: RDS(on)≤40mΩ · Enhancement mode: · 100 avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：333.83 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET짰 Power MOSFET

VDSS = 200V RDS(on) = 0.04Ω ID = 50A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET P

文件：641.1 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Fully Avalanche Rated • FEATURES • Static drain-source on-resistance: RDS(on)≤40mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：334.18 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：122.69 Kbytes 页数：8 Pages

IRF

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-247 packaging • Ease of paralleling • High speed switching • Hard switched and high frequency circuits • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：325.38 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：200.69 Kbytes 页数：8 Pages

IRF

HEXFET짰 Power MOSFET

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels pre

文件：2.050429 Mbytes 页数：8 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

文件：541.53 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.79918 Mbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司