HEXFET® Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- ctiveness. The TO-247 package preferred for commercial-industrial applications where higher power levels pr

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IRF

N-Channel MOSFET Transistor

· DESCRITION · High Speed Power Switching · FEATURES · Static drain-source on-resistance: RDS(on)≤40mΩ · Enhancement mode: · 100 avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：333.83 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET짰 Power MOSFET

VDSS = 200V RDS(on) = 0.04Ω ID = 50A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET P

文件：641.1 Kbytes 页数：8 Pages

IRF

Advanced Process Technology

文件：641.1 Kbytes 页数：8 Pages

IRF

Advanced Process Technology

文件：1.13621 Mbytes 页数：9 Pages

Infineon

英飞凌

Advanced Process Technology

文件：641.1 Kbytes 页数：8 Pages

IRF

采用 TO-247 M 系列封装的 200V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌