Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power

文件：144.68 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

文件：212.87 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)

Applications • Switch Mode Power Supply ( SMPS ) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and

文件：95.34 Kbytes 页数：8 Pages

IRF

isc N-Channel MOSFET Transistor

文件：369.13 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

文件：212.87 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)

Description Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power level

文件：115.74 Kbytes 页数：8 Pages

IRF

Power MOSFET

文件：212.87 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

文件：324.81 Kbytes 页数：2 Pages

ISC

无锡固电

SMPS MOSFET ( VDSS=500V , RDS(on)max=0.27廓 , ID=20A )

文件：195.24 Kbytes 页数：9 Pages

IRF

Power MOSFET

• Low gate charge Qg results in simple drive requirement\n• Improved gate, avalanche and dynamic dV/dt ruggedness\n• Fully characterized capacitance and avalanche voltage and current;

Vishay

威世