Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)

Description Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power level

文件：115.74 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)

Infineon

英飞凌

Square Type

文件：31.86 Kbytes 页数：1 Pages

PANASONIC

松下

ULTRAFAST RECTIFIERS 4.0 AMPERES 200-600 VOLTS

文件：100.14 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Silicon P-Channel JFET Transistor AF Amp

Absolute Maximum Ratings: Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate Current, IG . . . . . . .

文件：21.48 Kbytes 页数：2 Pages

NTE