Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Thes

文件：583.95 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole • Dynamic dV/dt rating • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/d

文件：643.8 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世科技

Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)

Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

文件：333.89 Kbytes 页数：8 Pages

IRF

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole • Dynamic dV/dt rating • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/d

文件：643.8 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Thes

文件：583.95 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

HEXFET Power MOSFET

文件：1.59553 Mbytes 页数：8 Pages

IRF

Power MOSFET

• Ultra low gate charge\n• Reduced gate drive requirement\n• Enhanced 30 V VGS rating;

Vishay

威世科技

Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)

Infineon

英飞凌

MOSFET N-CH600V HEXFET MOSFET

Vishay

威世科技