Power MOSFET

Power MOSFET FEATURES • Low Gate Charge QgResults in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective CossSpecified • Lead (Pb)-free Available APPLICATIONS

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VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN1001) Applications ● Switch Mode Power Supply ( SMPS ) ● Uninterru

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IRF

Square Type

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PANASONIC

松下

ULTRAFAST RECTIFIERS 4.0 AMPERES 200-600 VOLTS

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MOTOROLA

摩托罗拉

Silicon P-Channel JFET Transistor AF Amp

Absolute Maximum Ratings: Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate Current, IG . . . . . . .

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NTE