Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

文件：1.47709 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast S

文件：165.09 Kbytes 页数：6 Pages

IRF

Power MOSFET

文件：833.19 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

文件：1.47709 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：833.19 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：833.19 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A)

Infineon

英飞凌

MOSFET N-CH900V HEXFET MOSFET

Vishay

威世