Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A)

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS

文件：115.06 Kbytes 页数：8 Pages

IRF

HEXFET® Power MOSFET

Benefits\n● Low Gate Charge Qg results in Simple\n   Drive Requirement\n● Improved Gate, Avalanche and Dynamic\n   dv/dt Ruggedness\n● Fully Characterized Capacitance and\n   Avalanche Voltage and Current\n● Effective Coss Specified (See AN\n   1001)

Infineon

英飞凌

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 36A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

文件：371.25 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A)

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS

文件：115.06 Kbytes 页数：8 Pages

IRF

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch

文件：156.02 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch

文件：156.02 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET ( VDSS = 500V , RDS(on)max = 0.13廓 , ID = 36A )

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS

文件：147.21 Kbytes 页数：9 Pages

IRF

Power MOSFET

• Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC

文件：182.7 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

文件：374.03 Kbytes 页数：3 Pages

ISC

无锡固电

Power MOSFET

文件：182.7 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司