N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：1.09103 Mbytes 页数：4 Pages

BYCHIP

百域芯

Advanced Process Technology

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

文件：226.77 Kbytes 页数：11 Pages

IRF

N-Channel Enhancement Mode MOSFET

Application | « Adaptor » Charger '« Power management © SMPS Standby Power |

文件：2.03263 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

Surface Mount (IRFR2405)

Description The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ● Surf

文件：1.61391 Mbytes 页数：8 Pages

KERSEMI

Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A??

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

文件：129.36 Kbytes 页数：10 Pages

IRF

Surface Mount (IRFR2405)

文件：901.79 Kbytes 页数：10 Pages

KERSEMI