IRFR4105TRLPBF数据手册供应代理英飞凌IRF-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
IRFR4105TRLPBF	文件：244.71 Kbytes Page：11 Pages	Ultra Low On-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p	IRFInternational Rectifier 英飞凌英飞凌科技公司
4105	文件：90.94 Kbytes Page：1 Pages	RelampableSocket	VCC Visual Communications Company
ACTR4105	文件：58.89 Kbytes Page：3 Pages	trueone-port,surface-acoustic-wave(SAW)resonator	ACTAdvanced Crystal Technology 先进的晶体先进的晶体技术
AN4105	文件：368.51 Kbytes Page：22 Pages	DesignConsiderationsforSwitchedModePowerSuppliesUsingAFairchildPowerSwitch(FPS)inaFlybackConverter Introduction Flybackswitchedmodepowersupplies(SMPS)areamongthemostfrequentlyusedpowercircuitsinhouseholdandconsumerelectronics.ThebasicfunctionofanSMPSistosupplyregulatedpowertotheloadonthesecondary,oroutputside.AnSMPStypicallyincorporatesapowertransfo	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
AUIRFR4105	文件：244.23 Kbytes Page：12 Pages	AdvancedPlanarTechnologyLowOn-Resistance	IRFInternational Rectifier 英飞凌英飞凌科技公司
AUIRFR4105	文件：4.78457 Mbytes Page：10 Pages	AdvancedPlanarTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p	KERSEMI Kersemi Electronic Co., Ltd.
AUIRFR4105	文件：441.74 Kbytes Page：10 Pages	AdvancedPlanarTechnology AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesign	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
AUIRFR4105TR	文件：244.23 Kbytes Page：12 Pages	AdvancedPlanarTechnologyLowOn-Resistance	IRFInternational Rectifier 英飞凌英飞凌科技公司
AUIRFR4105TRL	文件：244.23 Kbytes Page：12 Pages	AdvancedPlanarTechnologyLowOn-Resistance	IRFInternational Rectifier 英飞凌英飞凌科技公司
AUIRFR4105TRR	文件：244.23 Kbytes Page：12 Pages	AdvancedPlanarTechnologyLowOn-Resistance	IRFInternational Rectifier 英飞凌英飞凌科技公司
AUIRFR4105Z	文件：726.28 Kbytes Page：12 Pages	AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
AUIRFR4105Z	文件：4.67522 Mbytes Page：12 Pages	AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive	KERSEMI Kersemi Electronic Co., Ltd.
AUIRFR4105Z	文件：323.57 Kbytes Page：14 Pages	HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRFInternational Rectifier 英飞凌英飞凌科技公司
AUIRFR4105ZTR	文件：323.57 Kbytes Page：14 Pages	HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRFInternational Rectifier 英飞凌英飞凌科技公司
AUIRFR4105ZTRL	文件：323.57 Kbytes Page：14 Pages	HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRFInternational Rectifier 英飞凌英飞凌科技公司
AUIRFR4105ZTRL	文件：726.28 Kbytes Page：12 Pages	AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
AUIRFR4105ZTRR	文件：323.57 Kbytes Page：14 Pages	HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRFInternational Rectifier 英飞凌英飞凌科技公司
AUIRFU4105Z	文件：323.57 Kbytes Page：14 Pages	HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRFInternational Rectifier 英飞凌英飞凌科技公司
AUIRFU4105Z	文件：726.28 Kbytes Page：12 Pages	AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
AUIRFU4105Z	文件：4.67522 Mbytes Page：12 Pages	AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive	KERSEMI Kersemi Electronic Co., Ltd.

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详细参数

型号：
IRFR4105TRLPBF
功能描述：
MOSFET MOSFT 55V 25A 45mOhm 22.7nC
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市慧业盛科技有限公司	IRFR4105TRLPBF	INFINEON TECHNOLOGIES	23+		30526	全新原装，有询必回	询价
深圳市高捷芯城科技有限公司	IRFR4105TRLPBF	Infineon(英飞凌)	23+	TO-252	9908	支持大陆交货,美金交易。原装现货库存。	询价
深圳市鹏和科技有限公司	IRFR4105TRLPBF	IR	2022+	TO-252	5000	全现原装公司现货	询价
深圳市华来深电子有限公司	IRFR4105TRLPBF	IR	23+	TO-252	11846	一级代理商现货批发,原装正品,假一罚十	询价
中科航电(深圳)半导体技术有限公司	IRFR4105TRLPBF	InfineonTechnologies	19+	TO-252-3	56800	DPak(2Leads+Tab)	询价
深圳兆威电子有限公司	IRFR4105TRLPBF	IR	2019	TO252	55000	绝对原装正品假一罚十!	询价
深圳市宏捷佳电子科技有限公司	IRFR4105TRLPBF	IR	23+	DPAK	12300	全新原装真实库存含13点增值税票!	询价
深圳市纳艾斯科技有限公司	IRFR4105TRLPBF	IR	2020+	TO252	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
上海市鑫鸿达电子	IRFR4105TRLPBF	InternationalRectifier	2022+		9000	全新原装货期两周	询价
深圳市斌腾达科技有限公司	IRFR4105TRLPBF	Infineon Technologies	21+	D-Pak	3000	100%进口原装!长期供应!绝对优势价格(诚信经营)!	询价

更多IRFR4105TRLPBF供应商更新时间2024-4-24 13:00:00

详细参数

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