IRFR4105Z中文资料PDF规格书
IRFR4105Z规格书详情
Description
Specifically designed for Automotive applications, thi MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
产品属性
- 型号:
IRFR4105Z
- 功能描述:
MOSFET N-CH 55V 30A DPAK
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
HEXFET®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
08+(pbfree) |
D-Pak |
8866 |
询价 | |||
IR |
23+ |
TO-252 |
10000 |
公司只做原装正品 |
询价 | ||
IR |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
VISHAY-威世 |
24+25+/26+27+ |
TO-252-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
IR |
20+ |
TO-252 |
38900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IR |
23+ |
NA/ |
12819 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
TO-252 |
500956 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | |||
散新现货 |
2020+ |
SOT252 |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
IR |
2020+ |
D-PAK |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 |