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型号	下载订购	功能描述	制造商上传企业	LOGO
IRFR4105Z	文件：206.97 Kbytes Page：11 Pages	Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A) AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch 文件：206.97 Kbytes 页数：11 Pages	IRF	IRF
IRFR4105Z	文件：335.34 Kbytes Page：2 Pages	N-Channel MOSFET Transistor • DESCRITION • High Speed Power Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤24.5mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：335.34 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRFR4105Z	文件：1.07008 Mbytes Page：11 Pages	Advanced Process Technology Description Specifically designed for Automotive applications, thi MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive 文件：1.07008 Mbytes 页数：11 Pages	KERSEMI	KERSEMI
IRFR4105ZPBF	文件：4.26926 Mbytes Page：11 Pages	AUTOMOTIVE MOSFET AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch 文件：4.26926 Mbytes 页数：11 Pages	KERSEMI	KERSEMI
IRFR4105ZPBF	文件：4.25111 Mbytes Page：11 Pages	AUTOMOTIVE MOSFET AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch 文件：4.25111 Mbytes 页数：11 Pages	KERSEMI	KERSEMI
IRFR4105ZPBF	文件：267.36 Kbytes Page：11 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb 文件：267.36 Kbytes 页数：11 Pages	IRF	IRF
IRFR4105ZTRL	文件：4.67522 Mbytes Page：12 Pages	AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, thi MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive 文件：4.67522 Mbytes 页数：12 Pages	KERSEMI	KERSEMI
IRFR4105ZLPBF	文件：335.84 Kbytes Page：11 Pages	Advanced Process Technology 文件：335.84 Kbytes 页数：11 Pages	IRF	IRF
IRFR4105ZPBF	文件：335.84 Kbytes Page：11 Pages	Advanced Process Technology 文件：335.84 Kbytes 页数：11 Pages	IRF	IRF
IRFR4105ZPBF	文件：335.84 Kbytes Page：11 Pages	Advanced Process Technology 文件：335.84 Kbytes 页数：11 Pages	IRF	IRF

技术参数

OPN：
IRFR4105ZTRPBF
Qualification：
Non-Automotive
Package name：
DPAK
VDS max：
55 V
RDS (on) @10V max：
24.5 mΩ
ID @25°C max：
30 A
QG typ @10V：
18 nC
Polarity：
N
VGS(th) min：
2 V
VGS(th) max：
4 V
VGS(th)：
3 V
Technology：
IR MOSFET™

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市美思瑞电子科技有限公司	IRFR4105Z	IR	22+	原厂封装	9450	原装正品，实单请联系	询价
深圳市河锋鑫科技有限公司	IRFR4105Z	IR	17+	D-Pak	31518	原装正品可含税交易	询价
柒号芯城电子商务(深圳)有限公司	IRFR4105Z	IR	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市一线半导体有限公司	IRFR4105Z	IR	24+	D-Pak	8866		询价
深圳市勤思达科技有限公司	IRFR4105Z	IR	2015+	D-Pak	12500	全新原装,现货库存长期供应	询价
深圳市卓越微芯电子有限公司	IRFR4105Z	散新现货	25+	SOT252	5000	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市华来深电子有限公司	IRFR4105Z	IR	23+	TO-252	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳诚思涵科技有限公司	IRFR4105Z	IR	18+	TO-252	85600	保证进口原装可开17%增值税发票	询价
深圳市赛芯源科技有限公司	IRFR4105Z	IR	18+	TO-252	41200	原装正品,现货特价	询价
中天科工半导体（深圳）有限公司	IRFR4105Z	IR	20+	TO-252	38900	原装优势主营型号-可开原型号增税票	询价

更多IRFR4105Z供应商更新时间2026-1-26 16:23:00

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