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IRFR4105ZPBF规格书详情
Description
This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
产品属性
- 型号:
IRFR4105ZPBF
- 功能描述:
MOSFET 55V 1 N-CH HEXFET 24.5mOhms 18nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2046+ |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | |||
IR/INFINEON |
24+23+ |
TO-252 |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
询价 | ||
IR |
2022+ |
TO-252 |
45000 |
我司100%原装正品现货,现货众多欢迎加微信 |
询价 | ||
Infineon(英飞凌) |
23+ |
TO-252 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IR |
23+ |
NA/ |
4807 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
17+ |
TO-252 |
1375 |
询价 | |||
IR |
22+ |
SOT-1370&NBS |
4500 |
全新原装品牌专营 |
询价 | ||
ir |
2023+ |
TO-252 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
23+ |
TO-252 |
30000 |
全新原装现货,价格优势 |
询价 |