IRFR4105Z中文资料IRF数据手册PDF规格书
IRFR4105Z规格书详情
AUTOMOTIVE MOSFET
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
产品属性
- 型号:
IRFR4105Z
- 功能描述:
MOSFET N-CH 55V 30A DPAK
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
HEXFET®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
21+ |
TO-252 |
5587 |
原装现货库存 |
询价 | ||
IR |
2020+ |
TO252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
INFINEON/英飞凌 |
2046+ |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | |||
IR/INFINEON |
24+23+ |
TO-252 |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
询价 | ||
INFINEON/英飞凌 |
22+ |
原厂原封 |
4875 |
只做原装 提供一站式配套供货 中利达 |
询价 | ||
IR |
23+ |
NA/ |
12819 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
22+ |
原厂封装 |
9450 |
原装正品,实单请联系 |
询价 | ||
INFINEON/英飞凌 |
21+ |
TO252 |
5000 |
全新原装 现货 价优 |
询价 | ||
ir |
2023+ |
TO-252 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
IR |
23+ |
TO-252 |
30000 |
全新原装现货,价格优势 |
询价 |