Power MOSFET

DESCRIPTION The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

文件：291.81 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche ratings • Surface-mount (IRFR9010, SiHFR9010) • Straight lead (IRFU9010, SiHFU9010) • Simple drive requirements • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCR

文件：1.53439 Mbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

P-CHANNEL POWER MOSFETS

FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

文件：306.39 Kbytes 页数：5 Pages

SAMSUNG

三星

SC70, 5ns, Low-Power, Single-Supply, Precision TTL Comparators

General Description The MAX9010/MAX9011/MAX9013 single and MAX9012 dual, high-speed comparators operate from a single 4.5V to 5.5V power supply and feature low-current consumption. They have precision differential inputs and TTL outputs. They feature short propagation delay (5ns, typ), low-supp

文件：330.45 Kbytes 页数：12 Pages

MAXIM

美信

150mA CMOS Low Dropout Voltage Regulator with Enable

文件：97.69 Kbytes 页数：4 Pages

TSC

台湾半导体