Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：1.89003 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dynamic dV/dt Rating

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：4.28393 Mbytes 页数：7 Pages

KERSEMI

P-channel Enhancement Mode Power MOSFET

Features  VDS= -100V, ID= -18A RDS(ON)

文件：929.94 Kbytes 页数：4 Pages

BYCHIP

百域芯

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：4.40688 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

文件：1.18471 Mbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.18471 Mbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司