High Efficiency Synchronous Rectification in SMPS

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free ● RoHS Compliant, Halogen-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptibl

文件：446.45 Kbytes 页数：11 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free ● RoHS Compliant, Halogen-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptibl

文件：433.13 Kbytes 页数：11 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free ● RoHS Compliant, Halogen-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptibl

文件：446.45 Kbytes 页数：11 Pages

IRF

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

The 2SK3306 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

文件：69.91 Kbytes 页数：8 Pages

NEC

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