P-CHANNEL POWER MOSFETS

FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

文件：306.39 Kbytes 页数：5 Pages

SAMSUNG

三星

Power MOSFET

DESCRIPTION The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and d

文件：291.81 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche ratings • Surface-mount (IRFR9010, SiHFR9010) • Straight lead (IRFU9010, SiHFU9010) • Simple drive requirements • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCR

文件：1.53439 Mbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：IPAK；Package：TO-251；isc P-Channel MOSFET Transistor

文件：283.14 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

Dynamic dV/dt rating\nRepetitive avalanche ratings\nSurface-mount (IRFR9010, SiHFR9010);

Vishay

威世

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche ratings • Surface-mount (IRFR9010, SiHFR9010) • Straight lead (IRFU9010, SiHFU9010) • Simple drive requirements • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCR

文件：1.53439 Mbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司