丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65Q

Features | + Vos=200v © os 60A © Rosow 50650 @Vos=10V

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TECHPUBLIC

台舟电子

SMPS MOSFET

SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

文件：3.7302 Mbytes 页数：10 Pages

KERSEMI

Power MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A)

SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

文件：126.79 Kbytes 页数：10 Pages

IRF

isc N-Channel MOSFET Transistor

• FEATURES • With TO-251(IPAK) packaging • High speed switching • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • DC-DC converters • Motor control • Switching applications

文件：247.42 Kbytes 页数：2 Pages

ISC

无锡固电