IRFRU3910技术资料参数原装现货无锡固电IRF-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRFRU3910	文件：152.71 Kbytes Page：11 Pages	Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：152.71 Kbytes 页数：11 Pages	IRF	IRF
IRFRU3910	文件：141.83 Kbytes Page：10 Pages	Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A) 文件：141.83 Kbytes 页数：10 Pages	IRF	IRF
IRFU3910	文件：141.83 Kbytes Page：10 Pages	Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A) 文件：141.83 Kbytes 页数：10 Pages	IRF	IRF
IRFU3910	文件：3.73438 Mbytes Page：10 Pages	Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：3.73438 Mbytes 页数：10 Pages	KERSEMI	KERSEMI
IRFU3910	文件：247.74 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor 文件：247.74 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

更多IRFRU3910供应商更新时间2025-11-18 14:00:00