Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：152.71 Kbytes 页数：11 Pages

IRF

Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)

文件：141.83 Kbytes 页数：10 Pages

IRF

Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)

文件：141.83 Kbytes 页数：10 Pages

IRF

7.6mm 0.3 inch COMPACT NUMERIC FRAME DISPLAY

FEATURES • Bright Bold Segments • Common Anode/Cathode • Low Power Consumption • Low Current Capability • Neutral Segments • Grey Face • Epoxy Encapsulated Frame • High Performance • High Reliability APPLICATIONS • Appliances • Automotive • Instrumentation • Process Control

文件：932.11 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

4-Bit DAC and Voltage Monitor

文件：222.85 Kbytes 页数：6 Pages

TI

德州仪器