Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A)

文件：215.04 Kbytes 页数：10 Pages

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Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A)

文件：215.04 Kbytes 页数：10 Pages

IRF

isc P-Channel MOSFET Transistor

文件：291.07 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：264.04 Kbytes 页数：10 Pages

IRF